| PART |
Description |
Maker |
| CGA-3318 |
Dual CATV Broadband High Linearity SiGe HBT Amplifier
|
Stanford Microdevices
|
| SGA6589Z |
DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAIN SiGe HBT
|
RF Micro Devices
|
| 2SC4258 |
FOR HIGH FREQUENCY/ MEDIUM FREQUENCY AMPLIFY APPLICATION
SMALL-SIGNAL TRANSISTOR
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION
|
Electronic Theatre Controls, Inc.
ETC
Isahaya Electronics Corporation
Sanyo Semicon Device
List of Unclassifed Manufacturers
|
| NESG3031M14-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| RQL1001JLTL-E RQL1001JLAQH |
SiGe MMIC High Frequency Low Noise Amplifier
|
http://
RENESAS[Renesas Electronics Corporation]
|
| HA31006ANP HA31006ANPTL-E |
SiGe MMIC High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
| ASG330 |
DC-2500 MHz SiGe HBT Amplifier
|
Advanced Semiconductor Business Inc.
|
| QPA4363APCK401 |
CASCADABLE SiGe HBT MMIC AMPLIFIER
|
RF Micro Devices
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
